METHOD OF MAKING MULTISTAGE PHOTOCELL CHIPS Russian patent published in 2013 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: method involves growing a photosensitive multilayer semiconductor structure on a germanium substrate; successively growing on the surface of the photosensitive multilayer structure a passivating layer and a contact layer, forming solid ohmic contacts on the rear and front surfaces of the photosensitive multilayer semiconductor structure. A contact grid is formed on the photocells by local chemical and ion-beam etching of the ohmic contact and the contact layer to open a portion of the underlying passivating layer and a multilayer antireflection coating is formed on the open portion of the passivating layer. Further, the multilayer structure is divided into chips and the lateral surface of the chips is passivated with a dielectric.

EFFECT: method reduces shading of the photosensitive surface of photocells and also simplifies the technology.

2 cl, 7 ex, 5 dwg