METHOD FOR FORMING VIA-WINDOWS Russian patent published in 2003 - IPC

Abstract RU 2202136 C2

FIELD: microelectronics; forming multilayer metal interconnections on integrated circuits. SUBSTANCE: in order to form tilted contour of via-windows in insulation photoresist mask produced on its surface is subjected to heat treatment at 140-160 C until inclined walls of windows are obtained and then this contour is transferred to windows in insulation layer by plasma- chemical etching at insulation-to-photoresist etching rate ratio of (1-1.5) : 1. Proposed method makes it possible to improve repeatability of window contour inclination thereby reducing probability of metal rupture on window walls. EFFECT: enhanced yield. 1 cl, 3 dwg

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RU 2 202 136 C2

Authors

Alekseev N.V.

Jachmenev V.V.

Eremenko A.N.

Novikov A.V.

Kolobova L.A.

Dates

2003-04-10—Published

2001-05-24—Filed