FIELD: microelectronics. SUBSTANCE: rectifying Schottky contacts are manufactured by annealing of crystal chemically cleaned in advance or of crystalline layer of silicon carbide in vacuum at temperature from 600 to 800 C for the course of 10 to 30 min. Aluminium is used as contact material which is deposited at temperature from 350 to 80 C. EFFECT: possibility of substitution of traditional metal of contact - gold with aluminium.
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