FIELD: electronics. SUBSTANCE: process includes precipitation of superconducting films by sputtering of ceramic target in cathode sputtering unit. Substrates are positioned in parallel to symmetry axis of cathode sputtering unit between inlet hole of vacuum pump-out system and outlet hole of argon and oxygen leak-in system at distance 1=(4-20)D from cathode sputtering unit, where D is distance between symmetry axis of sputtering unit and sputtered target. Precipitation of film is conducted at value of gas flow through sputtering zone equal to 0.2-150.0 mm Hg.1/s. EFFECT: improved efficiency of process. 1 dwg
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