INJECTION LASER Russian patent published in 1995 - IPC

Abstract RU 2035103 C1

FIELD: quantum electronics. SUBSTANCE: injection laser is based on heterostructure of semiconductor compositions AIIIBIV and of their solid solutions with emitter layers and active region positioned between them, mesastrip with base placed into it with emitter layer closest to it and barrier layers of lead selenide. Shape and dimensions of mesastrip as well as size of opposite emitter layer are chosen properly. EFFECT: expanded field of application. 1 dwg

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RU 2 035 103 C1

Authors

Davydova E.I.

Popovichev V.V.

Uspenskij M.B.

Khlopotin S.E.

Shvejkin V.I.

Shishkin V.A.

Dates

1995-05-10Published

1993-01-26Filed