FIELD: quantum electronics. SUBSTANCE: injection laser is based on heterostructure of semiconductor compositions AIIIBIV and of their solid solutions with emitter layers and active region positioned between them, mesastrip with base placed into it with emitter layer closest to it and barrier layers of lead selenide. Shape and dimensions of mesastrip as well as size of opposite emitter layer are chosen properly. EFFECT: expanded field of application. 1 dwg
Title | Year | Author | Number |
---|---|---|---|
INJECTION LASER | 1998 |
|
RU2134926C1 |
INJECTION LASER | 2002 |
|
RU2230411C2 |
INJECTION LASER MANUFACTURING PROCESS | 1990 |
|
SU1831213A1 |
INJECTION LASER | 2006 |
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RU2308795C1 |
INJECTION LASER | 1988 |
|
SU1831211A1 |
INJECTION LASER AND LASER DIODE STRIP | 2002 |
|
RU2230410C1 |
SEMICONDUCTOR LASER | 1996 |
|
RU2109382C1 |
PROCESS OF MANUFACTURE OF SEMICONDUCTOR OPTOELECTRON DEVICES | 1983 |
|
SU1829804A1 |
MULTIBEAM SEMICONDUCTOR INJECTION RADIATOR | 1991 |
|
SU1829853A1 |
INJECTION LASER | 2000 |
|
RU2168249C1 |
Authors
Dates
1995-05-10—Published
1993-01-26—Filed