FIELD: semiconductor quantum electronics. SUBSTANCE: mesa-stripe laser designed for use in modern fiber-optic communication systems, for pumping solid-state and fiber lasers, for medical and laser process equipment has mesa stripes on its sides and insulating coat on free surface of laser heterostructure made in the form of ZnSe epitaxial film, up to 0.6 mcm thick, and at least one layer of additional insulating coat in the form of extended regions parallel to mesa stripe which are spaced from the latter through at least two widths of mesa stripe; additional insulating coat has thermal characteristics approaching those of epitaxial structure material and of heterostructure insulating coat; total thickness of insulating coats is not smaller than height of mesa stripe; preferable materials for additional insulating coat may be ZnSe, ZnSe-ZnS, i-GaA. EFFECT: improved electric insulation, flatness, safety, power, service life, reduced mechanical stresses in structure at single-mode operation. 5 cl, 3 dwg, 1 ex
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Authors
Dates
1999-08-20—Published
1998-07-07—Filed