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Application

4952418/25, 1991-06-28

(22)

Actual filing date

1991-06-28

(45)

Published

1994-11-30

(72)

Inventor

Davydova E.I.Shishkin V.A.Kapsamun V.V.Vagner N.A.Kobjakova M.Sh.Filipov V.G.Pak G.T.

MULTIBEAM SEMICONDUCTOR INJECTION RADIATOR Russian patent published in 1994 - IPC

Abstract SU 1829853 A1

FIELD: communication systems, medical equipment, information recording and replay systems. SUBSTANCE: three strip ohmic contacts and separating regions in the form of grooves of proper width and distance of groove edges from centers of given ohmic contacts are made in surface of epitaxial structure of multibeam semiconductor injection radiator. Separating region between strip ohmic contacts is formed in the form separated grooves. EFFECT: enhanced operational efficiency. 2 dwg

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SU 1 829 853 A1

Authors

Davydova E.I.

Shishkin V.A.

Kapsamun V.V.

Vagner N.A.

Kobjakova M.Sh.

Filipov V.G.

Pak G.T.

Dates

1994-11-30—Published

1991-06-28—Filed

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