FIELD: radio engineering. SUBSTANCE: process of manufacture of semiconductor devices consists in application of layer of first metal on surface of semiconductor plate, in laying of second layer of metal over it and in formation of mask of resist over it for etching of separation tracks. Masks different in configuration are formed on upper and lower surfaces of plate. Plate is divided into crystals by etching. One of masks is manufactured in the form of circle, the other one in the form of polyhedron with rounded angles. EFFECT: facilitated manufacture, reduced labour input. 2 cl
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