FIELD: microelectronics. SUBSTANCE: manufacture of thin-film hybrid integrated circuit lies in formation of two-level communication pattern carried out simultaneously on three-layer conductor structure (vanadium-copper-electroplated copper- vanadium-copper) after preliminary creation of part of lower conductor located under interlayer insulation and spacing of future levels of commutation with the aid of technological windows as well as interlayer insulation over first sputtered layer of vanadium-copper-vanadium. After this levelling of relief "conductor-insulation" is conducted by electroplating. EFFECT: enhanced productivity. 20 dwg
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