FIELD: etching processes. SUBSTANCE: invention relates to microelectronic technics and may be, in particular, used for applying pattern of elements based on cupric phthalocyanine. Etching solution contains (in wt %): sulfuric acid, 16-17; nitric acid, 16-17; hydrochloric acid, 16-17; acetic acid, 43-40; and water, the balance. EFFECT: improved quality of elements due to more effective removal of treated material and reduced edge roughness of topological elements. 1 tbl
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