FIELD: microelectronics. SUBSTANCE: invention is intended to increase quality of microcircuits thanks to enhanced adhesion of commutation layers to dielectric substance with simultaneous shortening of technological process which is achieved by protection of substrate surface with technological metal layer in process of formation of polyimide interlayer insulation. Process enable shortened cleaning cycle to be used for interoperational cleaning of substrate surface as substrate surface does not contact polyimide varnish immediately besides sections of interlevel crossing of conductors. EFFECT: increased quality of microcircuits. 18 dwg
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