THIN FILM APPLICATION APPARATUS Russian patent published in 1995 - IPC

Abstract RU 2041972 C1

FIELD: vacuum and electronic engineering. SUBSTANCE: apparatus has vacuumizer with working gas inlet and outlet openings, substrate, magnetron source with anode, cathode and magnetic system. Cathode is made in the form of elliptic cylinder and mounted in vacuumizer so that two communicating zones for cleaning of working gas and application are defined. Getter material is applied to cylinder surface faced towards gas cleaning zone. Such construction facilitates active absorption of contaminants from working gas. EFFECT: increased efficiency of apparatus and high quality of thin film deposited. 3 dwg

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RU 2 041 972 C1

Authors

Chernyshov A.I.

Akhmedov V.Ju.

Rudnev V.V.

Ivanov A.S.

Dates

1995-08-20Published

1989-07-26Filed