FIELD: microelectronics. SUBSTANCE: method for chemicodynamic treatment of gallium arsenide wafers includes arrangement of wafers on rotating holder coaxially with rotation axis, pickling of wafers by supplying reagent in jet directed tangentially to treated surface, reversing rotation of holder with wafer during pickling and subsequent washing. Prior to drying, water supply is discontinued, then, discontinued is rotation of wafer, and treated surface is kept under water layer. To increase reliability of subsequent preservation of wafer surface, water is saturated with oxygen before its supply to wafer for washing. EFFECT: higher efficiency. 2 cl, 4 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF CHEMICAL DYNAMIC POLISHING | 2010 |
|
RU2447196C2 |
| METHOD FOR REMOVAL OF POSITIVE PHOTORESISTIVE MATERIAL AND DEVICE FOR IMPLEMENTATION OF SAID METHOD | 1992 |
|
RU2047931C1 |
| METHOD OF FORMING PROTECTIVE COATS FOR GRAPHITE SUBSTRATE HOLDERS AND DEVICE FOR METHOD EMBODIMENT | 1991 |
|
RU2165999C2 |
| PROCESS OF FORMATION OF THIN FILMS ON SEMICONDUCTOR SUBSTRATE AND DEVICE FOR ITS IMPLEMENTATION | 1992 |
|
RU2046450C1 |
| METHOD TO PRESERVE SURFACE OF SUBSTRATES FROM GALLIUM ARSENIDE | 2012 |
|
RU2494493C1 |
| METHOD FOR PRODUCING INSULATION OF SMALL-SCALE INTEGRATED CIRCUIT COMPONENTS | 2002 |
|
RU2236063C2 |
| PROCESS OF PLASMA ETCHING OF CONTACT WINDOWS IN INSULATING AND PASSIVATING LAYERS OF DIELECTRIC BASED ON SILICON | 1992 |
|
RU2024991C1 |
| DEVICE FOR CHEMICAL-DYNAMIC ETCHING OF GERMANIUM SUBSTRATES | 2015 |
|
RU2589517C1 |
| PROCESS PLANATION OF INTEGRATED CIRCUITS | 1992 |
|
RU2024992C1 |
| PROCESS OF CLEANSING OF ARTICLES, MAINLY SEMICONDUCTOR PLATES | 1992 |
|
RU2024993C1 |
