METHOD OF DIAGNOSIS OF STRUCTURAL CLEANNESS OF MONOCRYSTALS OF N TYPE SILICON GROWN BY ZONE MELTING Russian patent published in 1996 - IPC

FIELD: electronics. SUBSTANCE: invention is related to field of measurement of parameters of semiconductor materials. Examined and standard samples are irradiated with particles having energy sufficient to form Frenkel pairs, and with integral flux not leading to inversion of type of conductance. Then they are annealed, dependence of concentration of A centers on temperature is measured and annealing temperature of A centers is found by it. By relation between annealing temperature of A centers in examined and standard samples conclusion is made on presence of defects not exposed by selective etching in examined sample. EFFECT: improved reliability of method. 1 dwg, 1 tbl