FIELD: microelectronics. SUBSTANCE: anode electrochemical treatment of unprotected sections of low-resistance silicon plates is performed in 48% aqueous solution of hydrofluoric acid with current density 10-60 mA/sq.cm for course of 10-60 min to increase specific resistance of i-region under room temperature. EFFECT: increased specific resistance of i-region under room temperature.
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Authors
Dates
1996-02-20—Published
1993-01-13—Filed