METHOD OF OBTAINING RELIEF IN DIELECTRIC SUBSTRATE Russian patent published in 2018 - IPC H01L21/308 

FIELD: instrument engineering.

SUBSTANCE: invention relates to the field of instrument engineering and can be used in the manufacture of micromechanical sensors, such as accelerometers, angular velocity sensors, whose sensing elements are made of dielectric material. Method for obtaining a relief in a dielectric substrate consists in applying a protective mask to the substrate in the form of a multilayer system of two materials with different layer thicknesses, forming a protective mask configuration, etching the substrate and removing the mask. First and second protective layers forming the protective mask have a different configuration, the etching of the dielectric substrate is carried out in two steps, comprising first etching the dielectric substrate to a certain depth and etching the first protective layer of the face mask, the second etching of the dielectric substrate to a predetermined depth and the removal of the protective mask completely.

EFFECT: technical result consists in increasing the strength of micromechanical sensors by eliminating the concentrators of mechanical stresses at the transition points "initial substrate – etched surface".

1 cl, 5 dwg