FIELD: manufacture of semiconductor devices.
SUBSTANCE: proposed method for ion-beam doping of chips that can be used for organizing regions of medium energy ions of 10 - 500 keV in chips of regions of different conductivity and its polarity includes implantation of accelerated ions of doping impurity in chip and annealing; prior to annealing surface resistance is measured on irradiated side of chip, the latter is subjected to ultrasonic treated with chemically inactive liquid at frequency of 20 - 40 kHz, and this treatment is ceased as soon as resistance is brought to steady state value, whereupon annealing is made not later than in 24 hours after treatment.
EFFECT: enhanced concentration of electrically active dope and its more uniform distribution in doped layer due to reduced residual deficiency in chip.
1 cl, 2 tbl
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