METHOD OF PRODUCING PHOTODIODES ON CRYSTALS OF INDIUM ANTIMONID OF n-TYPE CONDUCTIVITY Russian patent published in 2008 - IPC H01L31/18 H01L21/265 

FIELD: processes; physics.

SUBSTANCE: method of producing photodiodes on crystals of indium antimonid of n-type conductivity includes preparation the wafer of initial indium antimonid crystal, generation of p-n pass by implantation beryllium ions with post-implantation annealing, application of protective and stabilise dielectric films and generating of contact combination. According to invention there are used wafers of initial indium antimonid crystal with impurity density 6·10¹³-2·10¹⁴ cm^-3, implantation of beryllium ions is implemented at energy 20-40 keV and implantation dose (0.8 - 1.2)·10¹⁴ cm^-3, post-implantation annealing is implemented fixed at temperature 350-375°C during 20-30 minutes with surface encapsulate film SiO₂.

EFFECT: increasing of photodiodes current sensitivity.

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