METHOD OF MAKING SEMICONDUCTOR DEVICE Russian patent published in 2016 - IPC H01L21/76 

FIELD: technological processes.

SUBSTANCE: invention can be used for production of semiconductor structures with low density of defects and resistant to thyristor effect. This invention consists in that method of making semiconductor device involves processes of doping and annealing, in silicon wafer areas of p-type pocket conductivity are formed by implantation of twin-charged boron ions formed B²⁺ with energy of 350-400 KeV, dose 3.1*10¹³ cm^-2, and areas of n-type pocket is by implantation of triple-charged ions of phosphorus P³⁺ with energy of 600 keV, dose of 1.3*10¹³ cm^-2, with subsequent thermal treatment of semiconductor structures at 900°C for two hours in oxygen.

EFFECT: reducing density of defects and suppression of thyristor effect, provision of manufacture ability; improved parameters, high reliability and percentage yield of serviceable devices.

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