METHOD FOR MANUFACTURE OF p-TYPE CONDUCTIVITY LAYERS ON InSb CRYSTALS Russian patent published in 2013 - IPC H01L31/18 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the technology for manufacture of semiconductor devices sensitive to IR radiation and may be used during manufacture of photodiodes on InSb crystals of n-type conductivity (p-n-transitions manufacture), phototransistors (manufacture of base regions on n-type conductivity crystals and emitters and ohmic contacts on p-type conductivity crystals), photoresistors based on p-type conductivity crystals (ohmic contacts). The method for manufacture of p-type conductivity layers on InSb crystals includes implantation of Be⁺ ions with energy not in excess of 40 keV and dose not in excess of 10¹⁴ cm^-2 and subsequent pulse annealing with halogen lamps radiation through a silicon filter within a dried argon or nitrogen atmosphere with the sample heated to the annealing temperature at a rate of 15-350 grad/s with cooling after annealing performed at a rate of no more than 10 grad/min/ annealing proceeds in two stages: first - at a temperature of 300-320 C with annealing duration equal to 40-120 s, second - at a temperature of 385-400 C with annealing duration equal to 10-20 s.

EFFECT: improvement of structural and electrophysical properties of the layers obtained due to both simple and complicated radiation defects most efficient annealing (at lower and higher temperatures respectively); annealing during the time specified is required for completion of the processes of such defects disintegration products diffusion towards the crystal surface.

2 cl, 1 tbl