FIELD: chemistry.
SUBSTANCE: in method of manufacturing layers of p-type conductivity on InGaAs crystals, including implantation of Be+ ions and post-implantation annealing, the latter is carried out at temperature 570÷580°C with 10÷20 s duration in vacuum or dried neutral atmosphere. In particular case of implementation annealing is performed by radiation of halogen lamps through silicon filter.
EFFECT: increase of manufacturability and reduction of energy consumption in obtaining layers with the best electrophysical properties.
2 cl, 1 dwg
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