FIELD: instrument engineering.
SUBSTANCE: invention can be used in the manufacture of photodiodes on crystals InAs of n-type conductivity, phototransistors, photoresistors based on crystals of p-type conductivity. The method of manufacturing of layers of p-type conductivity on crystals InAs comprises implantation of ions Be+ with the energy of (30÷100) keV and a dose of (1013÷3·1014) cm-2 and the postimplantation annealing in two stages with duration of each of (10÷20) seconds, the first - at a temperature T1=400÷450°C, the second - at a temperature T2=500÷550°C.
EFFECT: due to the most efficient annealing, when first the simple and then the complex defects are annealed, improvement of structural perfection of the layers is occurred.
1 dwg
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