SEMICONDUCTOR DEVICE Russian patent published in 1996 - IPC

Abstract RU 2065229 C1

FIELD: microelectronics, semiconductor devices both in the discrete version and as components of integrated circuits. SUBSTANCE: semiconductor device has two regions forming a rectifying junction, nonrectifying contacts to these regions, and a control electrode. The control electrode uses one or several electrically insulated components, it is positioned between the nonrectifying contacts and separated from the regions and nonrectifying contacts by dielectric. The control electrode overlaps at least one of the nonrectifying contacts. If the control electrode has several components, additional regions of the opposite type may be located between them. EFFECT: improved design. 7 dwg

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RU 2 065 229 C1

Authors

Vyglovskij Vladimir Mikhajlovich

Bubukin Boris Mikhajlovich

Dates

1996-08-10Published

1992-07-27Filed