FIELD: microelectronics. SUBSTANCE: silicon layer is pre-irradiated by gamma-quanta 60Co, then substrate is subjected to heat treatment at 500-750 K for 5-10 min, whereupon surface concentration of charge carriers in layer as function of temperature is measured at 77-400 K to determine temperature range of structure flaw ionization; data obtained are used to calculate thickness of analyzed layers. EFFECT: facilitated procedure. 1 dwg, 1 tbl
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