HANN DIODE Russian patent published in 1996 - IPC

FIELD: electronic devices. SUBSTANCE: diode chip has two volumes which are separated; contact area of anode volume is greater than that of cathode. Diode has n+ contact layer, n- active layer and n+ buffer layer. Chip is square-shaped. Anode contact is shaped as isosceles right triangle which legs are parallel to sides of chip square. Contact having lesser area is shaped either as square which sides are parallel to chip sides or as isosceles right triangle which legs are parallel to sides of chip. Ratio of areas of anode to contact contacts is no less than 10K where K ranges from 2 to 5. Contacts are located on chip square diagonal on opposite sides with respect to center of chip square and in symmetry about this diagonal. EFFECT: increased functional capabilities. 4 cl, 3 dwg