BEAM-LEAD MICROWAVE DIODE Russian patent published in 1996 - IPC

Abstract RU 2061980 C1

FIELD: semiconductor engineering; beam- lead and wire-lead devices to develop mixing, detecting, and other microwave diodes, extremely-high-frequency and ultrahigh-frequency diodes. SUBSTANCE: layer of flexible insulation placed under anode and cathode leads and functioning as carrying base of diode is partially removed in ceter that covers anode and in adjacent regions of anode and cathode leads. Insulating layer is formed as frame supported by beam leads and attached to them. EFFECT: improved strength of structure. 2 dwg

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RU 2 061 980 C1

Authors

Bozhkov V.G.

Genneberg V.A.

Romanovskaja V.N.

Dates

1996-06-10—Published

1992-08-14—Filed