FIELD: electricity.
SUBSTANCE: in semiconductor instrument containing sink, source consisting of transistor cells and peripheral p-n junction, which are located under gate electrode, as well as of metal electrode of source, which is located above gate electrode, polysilicon gate electrode insulated from source areas with dielectric, which contains in middle part the matrix of transistor cells and peripheral end part overlapping above the dielectric the source peripheral p-n junction; end part of polysilicon gate electrode, which overlaps above the dielectric the source peripheral p-n junction, is topologically separated from end cell of matrix of transistor cells and not covered with source metal coating.
EFFECT: reducing the resistance of power double-diffused MOS transistors in open state, without increase in the size of crystal and deterioration of other parameters.
2 cl, 3 dwg
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