BIPOLAR TRANSISTOR WITH DIELECTRIC-INSULATED GATE Russian patent published in 1996 - IPC

FIELD: microelectronics. SUBSTANCE: bipolar transistor with dielectric-insulated gate has one or more emitter, base, collector, source, drain zones electrically coupled in similar zones, and a gate located above the channel zone, which is connected in volume to other zones of conductivity of the same or opposite type. The channel zone and other zone of conductivity of the same type, connected to it in volume, are connected over the surface by a nonrectifying contact, which adjoins the dielectric layer that insulates the gate from the channel zone. EFFECT: maximized collector current, decreased switch time and collector-emitter saturation voltage due to the absence of parasitic thyristors and transistors, reduction of parasitic capacitances and resistances connected with the above mentioned nonrectifying contact. 4 dwg