FIELD: analytical instrument engineering. SUBSTANCE: the method of manufacture of gas transducer sensing element consists in application of metal phthalocyanine onto electrodes and subsequent radiation of the film by X-rays at an energy of 150 to 200 keV and dose of (4,5-9)103P.. EFFECT: facilitated procedure. 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF MANUFACTURE OF SEMICONDUCTOR GAS SENSOR | 1994 |
|
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| METHOD FOR FLAW INSPECTION OF SILICON FILMS ON INSULATING SUBSTRATES | 2000 |
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| SENSOR OF GAS COMPOSITION | 1994 |
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| PROCESS OF MANUFACTURE OF FILM RESISTORS | 1992 |
|
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| SILICON-ON-INSULATOR STRUCTURE MANUFACTURING PROCESS | 2000 |
|
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| PROCESS OF PHOTOLITHOGRAPHY | 1996 |
|
RU2096935C1 |
| RESISTIVE GAS TRANSDUCER | 1992 |
|
RU2038589C1 |
