FIELD: method is used in plasma processing, mainly in processes of surface vacuum metallization and synthesis of inorganic films in bundle-plasma discharge. SUBSTANCE: treated piece and target of solid inorganic substance are situated in working chamber, the chamber air is evacuated, feed working gas inside and in zone of piece surface treatment form steam flow, produced by evaporation of solid inorganic substance by beam of electrons. At least one additional beam of electrons is formed in the chamber and directed into zone of piece surface treatment. In the case additional beam of electrons is crossing vapor flow. It is provided, that additional solid inorganic substance is fed into additional beam of electrons, its evaporation and directing on surface of piece of chemically active particles flux made of mixture of solid substances vapors and working gas. It is advantageous, that additional beam of electrons has band-type configuration. EFFECT: improved process. 3 cl, 1 dwg
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Authors
Dates
1996-10-20—Published
1994-11-28—Filed