METHOD FOR PRODUCING HYBRID PHOTODIODE ARRAY AROUND INDIUM ANTIMONIDE Russian patent published in 1996 - IPC

FIELD: manufacture of array photodetectors operating in infra-red range of 3-5 mcm. SUBSTANCE: n- or p-type substrate InSb with carrier concentration 10¹⁴...10¹⁵ cm^-3 is coated with epitaxial layer n⁺-InSbc, n⁺ = /2-3/ . 10¹⁸ cm^-3, 100-500 mcm thick, which further functions as n⁺ substrate after substrate is thinned to about 10 mcm and p-n junctions are formed on it by ion implantation, and in completed array, when illuminated from rear side, it functions as optical filter cutting off rays from λ<3 mcm due to Bushtain-Moss effect. External side of epitaxial layer is covered with net of triangular grooves aligned with net of spaces between p-n junctions which increase utilization factor of radiation flux incident on array due to immersion effect and improve image contrast in case of diffraction from grating in Fresnel region. For reading signals, InSb array is connected by means of indium columns with Si array. EFFECT: improved utilization factor of radiation flux, improved image contrast. 2 dwg