COMPLEMENTARY BIPOLAR NAND GATE Russian patent published in 1997 - IPC

FIELD: microelectronics. SUBSTANCE: device has n-p-n transistor with multiple emitters, switching n-p-n transistor, which emitter is connected to common line and which collector serves as device output. Emitters of n-p-n transistor with multiple emitters serve as device inputs; its collector is connected to base of switching n-p-n transistor. In addition device has first and second p-n-p transistors. Collector of first p-n-p transistor is connected to base of n-p-n transistor with multiple emitters; collector of second p-n-p transistor is connected to base of switching n-p-n transistor; emitters of first and second p-n-p transistors are connected to power supply electrode. Bases of first and second p-n-p transistors are joined and are connected to collector of switching n-p-n transistor. EFFECT: decreased power usage. 2 dwg