INTEGRAL LOGICAL AND-NOT ELEMENT BASED ON LAYERED THREE DIMENSIONAL NANOSTRUCTURE Russian patent published in 2012 - IPC H01L27/04 B82B1/00 

Abstract RU 2452058 C2

FIELD: electricity.

SUBSTANCE: in the integral logical AND-NOT element based on a layered three dimensional nanostructure (the element containing the first and the second logical transistors, the first and the second injecting transistors and a substrate) the logical structure is designed to be nanosized with a stepped profile.

EFFECT: increased response speed and reduced power consumption.

18 dwg

Similar patents RU2452058C2

Title Year Author Number
INTEGRAL LOGICAL OR-NOT ELEMENT BASED ON SINGLE-LAYER 3D NANOSTRUCTURE 2015
  • Eroslaev Andrej Viktorovich
  • Trubochkina Nadezhda Konstantinovna
RU2589512C1
SEMICONDUCTOR STRUCTURE OF LOGICAL ELEMENT AND-NOT 2010
  • Belyj Aleksej Vladimirovich
  • Luk'Janchikov Nikolaj Igorevich
  • Trubochkina Nadezhda Konstantinovna
RU2444086C2
MEMORY CELL BASED ON THIN-LAYER NANOSTRUCTURE 2010
  • Orlov Pavel Vladimirovich
  • Popovich Il'Ja Pavlovich
  • Trubochkina Nadezhda Konstantinovna
RU2444806C2
NANOSCALE LOGIC INVERTER FOR DIGITAL DEVICES 2020
  • Gurovich Boris Aronovich
  • Prikhodko Kirill Evgenevich
  • Kuleshova Evgeniya Anatolevna
  • Kutuzov Leonid Vyacheslavovich
RU2744161C1
BISTABLE MEMORY CELL BASED ON SINGLE-LAYERED NANOSTRUCTURE 2015
  • Popovich Ilya Pavlovich
  • Trubochkina Nadezhda Konstantinovna
RU2611094C1
SEMICONDUCTOR STRUCTURE OF INVERTER 2010
  • Ignatova Ehl'Za Sergeevna
  • Sazont'Ev Vladimir Vladimirovich
  • Trubochkina Nadezhda Konstantinovna
RU2444090C1
NANOSIZED LOGICAL DEVICE 2020
  • Gurovich Boris Aronovich
  • Prikhodko Kirill Evgenevich
  • Kuleshova Evgeniya Anatolevna
  • Kutuzov Leonid Vyacheslavovich
RU2743510C1
BIPOLAR TRANSISTOR 1998
  • Rakitin V.V.
RU2166220C2
LATERAL BIPOLAR TRANSISTOR BASED ON “SILICON ON INSULATOR” STRUCTURES AND THE METHOD FOR ITS MANUFACTURE 2021
  • Kabalnov Yurij Arkadevich
  • Shobolova Tamara Aleksandrovna
  • Obolenskij Sergej Vladimirovich
RU2767597C1
HIGH-VOLTAGE SELF-ALIGNED INTEGRATED DIODE 2012
  • Manzha Nikolaj Mikhajlovich
  • Raskin Aleksandr Aleksandrovich
RU2492552C1

RU 2 452 058 C2

Authors

Vorob'Ev Vitalij Vladimirovich

Sosnin Aleksej Anatol'Evich

Trubochkina Nadezhda Konstantinovna

Dates

2012-05-27Published

2010-05-14Filed