COMPLEMENTARY NOR GATE AND ITS CIRCUIT ARRANGEMENT Russian patent published in 1997 - IPC

FIELD: microelectronics; logic and superlarge-scale integrated circuits of superlow power requirement. SUBSTANCE: functionally integrated NOR circuit has substrate of first polarity of conductivity with 10¹⁹-10²⁰ cm^-3 concentration that mounts common collector region of second polarity of conductivity of switching n-p-n transistors combined with base of multicollector p-n-p loading transistor accommodating base regions of first polarity of conductivity of n-p-n switching transistors with 10¹⁷-10¹⁸ cm^-3 concentration combined with collectors of multicollector p-n-p loading transistor separated by deep insulating region of silicon dioxide incorporating highly doped emitter regions of second polarity of conductivity of n-p-n switching transistors with 2•10²⁰ cm^-3 concentration. Complementary NOR gate is surrounded by highly doped region of first polarity of conductivity with 10²⁰ cm^-3 concentration connected to power electrode. Input electrodes are connected, respectively, to base regions of first polarity of conductivity of n-p-n switching transistors. Output electrode is connected to highly doped region of first polarity of conductivity that functions to shape resistive contact with common collector region of second polarity of conductivity of n-p-n switching transistors. Zero-potential electrode is connected to highly doped emitter regions of second polarity of conductivity of n-p-n switching transistors. Complementary NOR gates are functionally integrated circuits compatible with bipolar technology. EFFECT: reduced power requirement and occupied chip area, improved speed of response which makes it possible to improve technical parameters of integrated circuits. 2 cl, 6 dwg