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2 074 429

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IPC

(21) (22)

Application

94016497/07, 1994-04-29

(22)

Actual filing date

1994-04-29

(45)

Published

1997-02-27

(72)

Inventor

Andreev V.M.Esenkov A.P.Zinov'Ev D.V.Tuzovskij K.A.

(73)

Holder

Moskovskij Gosudarstvennyj Institut Ehlektronnoj Tekhniki Universitet)

TEMPERATURE TRANSDUCER Russian patent published in 1997 - IPC

Abstract RU 2074429 C1

FIELD: semiconductor devices for transmission of electric signal caused by temperature. SUBSTANCE: device has temperature-sensitive resistor 1 and heater 2 with contact plates 3. temperature-sensitive resistor 1 and heater 2 are made from single-crystal silicon and are designed as lines which are located in substrate 4 of heavy-conductivity polysilicon. Both temperature-sensitive resistor 1 and heater 2 are insulated from substrate 4 by means of silicon dioxide layer 5. Single-crystal line of heater 2 is covered with layer 6 which is made from silicide of transient metal, such as Ni, Cr, Ti or Mo. Layer 6 and contact plates 3 to heater 2 and temperature-sensitive resistor 1 are manufactured in single cycle for example by means of deposition without additional complexity of process. EFFECT: increased precision and stability, low delay. 3 dwg, 1 tbl

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RU 2 074 429 C1

Authors

Andreev V.M.

Esenkov A.P.

Zinov'Ev D.V.

Tuzovskij K.A.

Dates

1997-02-27—Published

1994-04-29—Filed

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