FIELD: vacuum treatment of semiconductor plates. SUBSTANCE: heat-conducting material used for the purpose is low-melting metal gallium placed in liquid state in pan without additional fixation and then heat-conducting rubber spacer is inserted between plates and pan. EFFECT: facilitated procedure. 2 dwg
Title | Year | Author | Number |
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DEVICE FOR COOLING OF SUBSTRATES IN VACUUM | 1993 |
|
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COOLING SYSTEM OF SUBSTRATES IN VACUUM | 1993 |
|
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METHOD OF ADMITTING GAS INTO VACUUM CHAMBER | 1993 |
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APPARATUS FOR COOLING SUBSTRATES IN VACUUM | 1993 |
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PIEZO-DRIVE | 1993 |
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CATHODE UNIT | 1993 |
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CATHODE JOINT FOR IONIC-PLASMA APPLICATION OF THIN FILMS IN VACUUM | 1992 |
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CATHODE UNIT | 1993 |
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Authors
Dates
1997-03-27—Published
1993-04-26—Filed