FIELD: vacuum treatment of semiconductor plates. SUBSTANCE: heat-conducting material used for the purpose is low-melting metal gallium placed in liquid state in pan without additional fixation and then heat-conducting rubber spacer is inserted between plates and pan. EFFECT: facilitated procedure. 2 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| DEVICE FOR COOLING OF SUBSTRATES IN VACUUM | 1993 |
|
RU2089654C1 |
| COOLING SYSTEM OF SUBSTRATES IN VACUUM | 1993 |
|
RU2089662C1 |
| METHOD OF ADMITTING GAS INTO VACUUM CHAMBER | 1993 |
|
RU2073745C1 |
| APPARATUS FOR COOLING SUBSTRATES IN VACUUM | 1993 |
|
RU2046838C1 |
| PIEZO-DRIVE | 1993 |
|
RU2086417C1 |
| CATHODE UNIT | 1993 |
|
RU2089661C1 |
| CATHODE JOINT FOR IONIC-PLASMA APPLICATION OF THIN FILMS IN VACUUM | 1992 |
|
RU2074904C1 |
| CATHODE UNIT | 1993 |
|
RU2089658C1 |
| CATHODE UNIT FOR PRODUCTION OF THIN FILMS IN VACUUM | 1993 |
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RU2089660C1 |
| DESIGN OF CATHODE UNIT FOR APPLICATION OF FILMS IN VACUUM | 1993 |
|
RU2089659C1 |
Authors
Dates
1997-03-27—Published
1993-04-26—Filed