FIELD: manufacture of integrated circuits and optoelectronic devices. SUBSTANCE: method involves growing GaAs buffer layer on semiconductor substrate made of GaAs followed by epitaxy of InSb layer in stage 3-solid-phase epitaxy of amorphous layer deposited at room temperature, low-temperature, and high-temperature epitaxy. EFFECT: enlarged functional capabilities.
| Title | Year | Author | Number |
|---|---|---|---|
| SEMICONDUCTOR HETEROEPITAXIAL STRUCTURE WITH HIGH LIFE TIME | 1993 |
|
RU2045106C1 |
| SEMICONDUCTOR HETEROEPITAXIAL STRUCTURE FOR PHOTODETECTING CELL | 1993 |
|
RU2065224C1 |
| SILICON-ON-GLASS HETEROSTRUCTURE AND ITS PRODUCTION PROCESS | 1994 |
|
RU2084987C1 |
| CAPACITIVE PRESSURE PICKUP | 2003 |
|
RU2251087C2 |
| HETEROEPITAXIAL STRUCTURE WITH A DIAMOND HEAT SINK FOR SEMICONDUCTOR DEVICES AND METHOD FOR ITS MANUFACTURE | 2020 |
|
RU2802796C1 |
| METHOD FOR PRODUCING HETEROEPITAXIAL LAYERS OF III-N COMPOUNDS ON MONOCRYSTALLINE SILICON WITH 3C-SIC LAYER | 2020 |
|
RU2750295C1 |
| SEMICONDUCTOR STRUCTURE FOR PHOTO-CONDUCTING ANTENNAS | 2016 |
|
RU2624612C1 |
| METHOD FOR PREPARATION OF InSb SUBSTRATE SURFACE FOR HETEROSTRUCTURE GROWING USING MBE | 2015 |
|
RU2613487C1 |
| METHOD FOR PRODUCING RESISTIVE CONTACT LAYER AND SEMICONDUCTOR DEVICE OF GROUPS II-VI | 1992 |
|
RU2151457C1 |
| SEMICONDUCTOR STRUCTURE FOR PHOTO-CONDUCTING ANTENNAS | 2017 |
|
RU2671286C1 |
