MANUFACTURING METHOD OF SOLAR ENERGY CONVERTER WITH HIGH EFFICIENCY Russian patent published in 2019 - IPC H01L31/20 

FIELD: electrical engineering.

SUBSTANCE: invention relates to production of semiconductor devices, particularly, to manufacturing technology of solar energy converter. Method of making a semiconductor device with a structure with p, i, n layers, involving doping processes, wherein formation of the i-layer in the p-i-n structure is carried out in three steps: first step – deposition of Si:H films at rate of 0.3 nm/s, at HF power of 8 W, with flow rate SiH₄ 20 cm³/s and pressure 27 Pa; second step – deposition of Si:H films at rate of 0.6 nm/s, at HF power of 15 W, with flow rate of SiH₄ 50 cm³/s and pressure of 45 Pa, third stage – deposition of Si:H films at rate of 1.0 nm/s, at HF power of 28 W, with flow rate of SiH₄ 80 cm³/s and pressure of 65 Pa, followed by doping the i-layer with boron to 0.05×10^-4 % at ratio (B₂H₆/SiH₄) 10^-4 % in gas mixture.

EFFECT: invention provides higher efficiency, manufacturability, improved parameters of devices, higher quality and higher percentage yield.

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