AVALANCHE PHOTODIODE Russian patent published in 2007 - IPC H01L31/06 

FIELD: semiconductor photosensitive instruments with an internal signal amplification.

SUBSTANCE: the claimed avalanche photodiode may be used for recording of superlow fluxes of light and gamma quanta, as well as of charged particles as components of devices for medical gamma tomography, radiation monitoring and physical experiments. The avalanche photodiode has two semiconductor layers of the opposite type of conductance having a common interface. At least two separate areas of conductance of the same type are formed at least in one of the layers they are positioned along the common boundary of separation of the layers and form P-N-P-N junctions together with them in the direction perpendicular to the mentioned boundary.

EFFECT: improved stability of operation and enhanced sensitivity of the avalanche photodiode.

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