MICROPIXEL AVALANCHE PHOTODIODE Russian patent published in 2022 - IPC H01L31/352 H01L31/107 H01L31/117 

FIELD: medical technology; nuclear experiments.

SUBSTANCE: micropixel avalanche photodiode can be used to register weak streams of light and gamma quanta, as well as charged particles as part of medical gamma tomography devices, radiation monitoring and nuclear physics experiments. A micropixel avalanche photodiode includes two semiconductor layers located on the surface of a semiconductor substrate and a matrix of semiconductor regions located between the semiconductor layers. The area of the matrix of semiconductor regions is completely surrounded by a protective matrix of additional semiconductor regions. A highly alloyed layer is formed between one of the semiconductor layers and the semiconductor substrate. The invention makes it possible to improve the stability of operation and increases the sensitivity of the micropixel avalanche photodiode, so the device is able to operate in the Geiger counter mode, which allows recording single light quanta at room temperature.

EFFECT: improving the stability of operation and increasing the sensitivity of the avalanche photodiode.

1 cl, 1 dwg