METHOD FOR PRODUCING POROUS SILICON BASE LUMINESCENT FILMS Russian patent published in 1997 - IPC

Abstract RU 2086050 C1

FIELD: electroluminescence devices with porous silicon as active layer. SUBSTANCE: method involves anodic oxidation of silicon plates covered with porous silicon layer formed in 0.1-0.5M aqueous solution of ammonium dihydrophosphate at current density of 1-10 mA/sq.cm. Radiation spectrum is shifted for short time between 750 and 590 nm and luminous intensity rises from 2,5 x 10³ to 5 x 10⁵ relative units. Anodizing process in electrostatic mode is characterized in utmost terminal voltage of 250 V. EFFECT: improved luminous intensity, high depth of anodic oxidation.

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RU 2 086 050 C1

Authors

Gavrilov S.A.

Sorokin I.N.

Sosnovskikh Ju.N.

Dates

1997-07-27—Published

1994-09-14—Filed