FIELD: chemistry.
SUBSTANCE: method for producing filamentary nanocrystals Si (FNC) includes the preparation of silicon wafer by coating the nano-dispersed catalyst particles on its surface with a subsequent placement in a growing oven, heating and depositing the crystallizable substance from the gas phase under the scheme pairs → of dropping liquid → crystal. Before depositing the catalyst, particles and placing the substrate in the growing oven, a Ti film is applied to the Si plate and anodized for 5 to 90 minutes in a 1% solution NH4F in ethylene glycol. The density of anode current is maintained in the range of 5 to 20 mA/cm2, and the catalyst nanoparticles are applied on anodized Ti surface with a deposition of metal selected from a number of Ni, Ag, Pd, 0.1 M solution having the general formula Me(NO3)x, where Me - Ni, Ag, Pd; x=1-2, for 1-2 min when exposed to a solution with ultrasound power of 60 Watt.
EFFECT: invention makes it possible to obtain FNC with diameters of 10 to 100 nm uniformly distributed over the substrate surface and having a small unbalance of transverse dimensions.
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Authors
Dates
2018-03-23—Published
2016-06-14—Filed