SCHOTTKY-BARRIER HIGH-POWER MICROWAVE FIELD-EFFECT TRANSISTOR Russian patent published in 2007 - IPC H01L29/00 

FIELD: electronic engineering.

SUBSTANCE: proposed Schottky-barrier high-power microwave field-effect transistor has semi-insulating gallium arsenide substrate with n active layer of maximum thickness 0.4 μm and dope concentration of 2 x 10¹⁷ -1 x 10¹⁸ cm³; it is made in the form of strip of at least one sequence of source, gate, and drain electrodes; disposed between source-drain pairs are semi-insulating gallium arsenide regions, 4 - 6 μm thick; provided in source-drain pairs are passages with groves, 0.9 - 1.3 μm thick and 0.2 - 0.3 μm deep; the latter accommodate single gate electrodes of maximum 0.7 μm in length; single gate electrodes are spaced apart from groove end on source and drain sides through 0.1 0.3 and 0.5 - 0.7 μm, respectively.

EFFECT: enhanced power output and power gain of proposed transistor which enhances its efficiency.

2 cl, 1 dwg, 1 tbl