FIELD: radio electronics; manufacturing masks for printed-circuit boards. SUBSTANCE: substrate transparent in at least one 60 nm of wavelength sections between 10-5 and 4•102 nm is sequentially covered with Cr-Cu-Cr layers, photoresist mask is formed through negative mask, chromium layer is removed through mask cuts, and copper and lead layers are sequentially deposited. Then photoresist mask and Cr-Cu-Cr metal layers are removed. EFFECT: facilitated procedure. 3 cl, 5 dwg
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