PLANT FOR GROWING POLYCRYSTALLINE SILICON RODS Russian patent published in 2003 - IPC

FIELD: manufacture of semiconductor materials, polycrystalline silicon rods in particular. SUBSTANCE: proposed plant has split reactor 1, vertical upright 2, container 3, hoist 4, electric power and component supply system 5. Upper part 6 of reactor 1 is secured immovably on vertical upright 2 forming loading/unloading zone; it is separated from lower movable part by horizontal joint 7. Lower part of reactor is divided into ferrule 9 and bottom part 10 by means of additional horizontal joint 8. Hoist 4 is mounted on guides 11 of upright 2 and is coupled with lower part of reactor by means of locking unit. Located on upper wall of fixed part of reactor are current leads 13 with attachment units 14 of bases 15. Container 3 having seats 16 made in accordance with position of current leads 13 is provided with protective ferrule 17 embracing the seats for entering ferrule 9 of reactor 1. EFFECT: enhanced safety; protection of rods against dirt in case of their break or cracking in unloading. 2 cl, 5 dwg