METHOD FOR PRODUCING TRANSPARENT AND EASILY CONDUCTING ZNO-GA LAYERS Russian patent published in 1997 - IPC

Abstract RU 2095888 C1

FIELD: optoelectronics; solar energy converters, data display systems, miscellaneous heat-storage and heat-insulating devices affording selective transmission and reflection of radiation. SUBSTANCE: proposed ZnO:Ga coating is produced by using method of chemical transport reactions in low-pressure reactor, in hydrogen environment, doping being made directly in the course of growth. ZnO:Ga layers are transparent in 0.4-1 mcm area ((T > 85%)), provide effective reflection in thermal infra-red spectrum of 5-50 mcm ((R > 80%)), possess low resistivity ((ρ = 1,2•10-4 Ohm-cm) and stability of their electrical characteristics under temperature variations between 20 and 650 C in the environment of various gases (argon, hydrogen, hydrogen plasma, and air). EFFECT: enlarged functional capabilities of layer obtained. 2 dwg

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RU 2 095 888 C1

Authors

Ataev Badavi Magomedovich

Dzhabrailov Aslan Mikailovich

Mamedov Valerij Vladimirovich

Rabadanov Rabadan Abdulkadyrovich

Dates

1997-11-10Published

1994-08-15Filed