FIELD: vacuum engineering, in particular, vacuum application of thin films. SUBSTANCE: the offered device has vacuum chamber with source for film application, substrate holder and heater located behind it, movable flat hollow gate with, at least, one hole and located between source and substrate holder, and systems of supply of working gas and pumping out of it. Gate is connected with the system of working gas supply. EFFECT: higher quality of product treatment due to supply into hollow gate of dry and dedusted in filter gas containing solid particles of argon which, flowing through holes in gate, tears off microparticles found on the product. 3 cl, 2 dwg
Title | Year | Author | Number |
---|---|---|---|
THIN FILMS FROM GAS PHASE DEPOSITION DEVICE | 2017 |
|
RU2679031C1 |
DEVICE FOR FORMING MULTICOMPONENT AND MULTILAYER COATINGS | 2015 |
|
RU2657671C2 |
INSTALLATION FOR HIGH-TEMPERATURE VACUUM ANNEALING OF THIN FILMS WITH POSSIBILITY OF IN SITU OPTICAL OBSERVATION WITH HIGH RESOLUTION | 2020 |
|
RU2755405C1 |
REACTOR FOR PLASMA-CHEMICAL ETCHING OF SEMICONDUCTOR STRUCTURES | 2017 |
|
RU2678506C1 |
DEVICE FOR ION-PLASMA SPUTTERING | 2018 |
|
RU2691357C1 |
PLASMA DEVICE FOR APPLICATION OF MULTILAYERED FILM COATINGS | 2011 |
|
RU2482216C2 |
DEVICE FOR VACUUM-PLASMA DEPOSITION OF MATERIALS WITH ION STIMULATION | 2016 |
|
RU2682744C2 |
DEVICE FOR PRODUCING PHOTONIC-CRYSTALLINE FILMS ON SUBSTRATE BY VERTICAL DRAWING FROM COLLOIDAL SOLUTION | 2024 |
|
RU2832259C1 |
METHOD FOR PRODUCING THIN-FILM RESISTORS | 2004 |
|
RU2270490C1 |
GASEOUS-VAPOR DEPOSITION APPARATUS | 2000 |
|
RU2194088C2 |
Authors
Dates
1997-11-20—Published
1996-05-13—Filed