THIN FILMS FROM GAS PHASE DEPOSITION DEVICE Russian patent published in 2019 - IPC C23C16/54 C23C16/458 C23C16/46 

FIELD: technological processes.

SUBSTANCE: invention relates to equipment for the chemical vapors thin films and coatings deposition on the flat semiconductor substrate and can be used in the electronic and electromechanical devices manufacturing technological processes. Thin films from the gas phase on the flat semiconductor substrate deposition device comprises a chamber, in which the substrate holder, the process gases supply and pumping out modules, the inert gases supply and pumping out modules and the heater are located. Heater is installed above the substrate holder, the substrate holder is made with a round socket with a bottom for the substrate placement therein with the working side down, process gases supply and pumping out modules and the inert gases supply and pumping out modules are built into the substrate holder. Process gases supply and pumping out modules number is a multiple of three. Inert gases supply and pumping out modules are located between the process gases supply and pumping out modules. Each process gases supply and pumping out module includes a jet plasma source, made with a channel in which the first electrode and at least one second electrode are located. Jet plasma source and at least one second electrode are interfaced by means of a recess formed in the round socket bottom. Jet plasma source is set at an angle of 40-60° to the round socket bottom, located in the first plane, perpendicular to the second plane, passing through the substrate holder axis, and the radius connecting the substrate holder center to the jet plasma source exit center into the recess. In particular embodiments of the invention, between the substrate holder and the heater an optically transparent plate is installed.

EFFECT: enabling the device design simplification and the use of fewer reagents for the thin films deposition from the gas phase.

1 cl, 4 dwg