FIELD: electrical engineering.
SUBSTANCE: device contains a process vacuum chamber (1) with pumping means and a system for process gas puffing and dosing, two or more arc sources (2) of the material to be applied, with powers supply sources, positioned along the chamber periphery, a platen (7) with a substrate (8) positioned horizontal and axially symmetrical in the chamber bottom part, and a magnetic system. From above, the process chamber is additionally equipped with a dielectric window (3) with a charge excitation electrode (4) that, via the interface device (5), is connected to a HF generator (6). The magnetic system is designed in the form of two solenoid elements (12, 13), enclosing the chamber top and bottom part respectively.
EFFECT: device usage enables increase of treated substrates area, additionally ensuring high uniformity of coating application across the substrate radius so that to enable control of multilayered film systems properties.
4 cl, 3 dwg
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Authors
Dates
2013-05-20—Published
2011-04-07—Filed