METHOD OF MAKING MULTI-ELEMENT PHOTODETECTOR CRYSTAL BASED ON MIS-STRUCTURE OF SEMICONDUCTOR COMPOUNDS Russian patent published in 2012 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: layered structure having a gate insulator (SiO₂) is formed on an InAs wafer. Gates and contact columns (In) are successively made on the gate insulator. The gates are made in form of a sequence of layers: a layer of a material which directly forms a gate (In₂O₃); a continuous protective layer of material which provides chemical protection for the layer of material which directly forms a gate, with subsequent operations for making the photodetector crystal, and which provides high adhesion to the layer of material which directly forms a gate (Cr); a continuous protective layer of material which provides protection from oxidation of the first protective layer and adhesion of the material used in making contact columns, and to material which provides chemical protection for the layer of material which directly forms a gate (Ni).

EFFECT: reduced percentage of noisy elements and increase in output of suitable structures by almost double owing to making gates in three layers from the selected materials.

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